Published in
American Institute of Physics, Journal of Applied Physics, 21(127), p. 214303, 2020
DOI: 10.1063/5.0003230
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Atomically flat HfO2 layer fabricated by mild oxidation HfS2 with controlled number of layers
Journal article published in 2020 by
Y. Y. Wang 
,
S. M. Huang,
K. Yu,
J. Jiang ,
Y. Liang,
B. Zhong,
H. Zhang,
G. F. Kan ,
S. F. Quan,
J. Yu
,
S. M. Huang,
K. Yu,
J. Jiang ,
Y. Liang,
B. Zhong,
H. Zhang,
G. F. Kan ,
S. F. Quan,
J. Yu
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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