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IOP Publishing, JPhys Energy, 3(2), p. 032007, 2020

DOI: 10.1088/2515-7655/ab8b69

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Review of ZnSnN2 semiconductor material

Journal article published in 2020 by Imran S. Khan ORCID, Karen N. Heinselman ORCID, Andriy Zakutayev ORCID
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

Abstract Zinc tin nitride (ZnSnN2) is one of the emerging ternary nitride semiconductors considered for photovoltaic device applications due to its attractive and tunable material properties and earth abundance of constituent elements. Computational predictions of the material properties sparked experimental synthesis efforts, and currently there are a number of groups involved in ZnSnN2 research. In this article, we review the progress of research and development efforts in ZnSnN2 across the globe, and provide several highlights of accomplishments at the National Renewable Energy Laboratory (NREL). The interplay between computational predictions and experimental observations is discussed and exemplified by focusing on unintentional oxygen incorporation and the resulting changes in optical and electronic properties. The research progress over the past decade is summarized, and important future development directions are highlighted.