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American Association for the Advancement of Science, Science, 6487(368), p. 177-180, 2020

DOI: 10.1126/science.aay8663

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Ratcheting quasi-ballistic electrons in silicon geometric diodes at room temperature

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Room-temperature electron ratchets Conventional diodes rectify current flow by forming a junction between dissimilar conductors; a metal-semiconductor diode that forms a Schottky barrier is one example. In these devices, capacitance limits operating frequency. Custer et al. describe a diode made entirely of silicon that can rectify currents up to 40 gigahertz at room temperature. They fabricated silicon nanowires with a cylindrical sawtooth profile that act as ratchets, funneling current preferentially in one direction through specular reflection of quasi-ballistic electrons. Science , this issue p. 177