Published in
Wiley, physica status solidi (a) – applications and materials science, 7(217), p. 1900802, 2020
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High‐Temperature Operation of Al<sub>x</sub>Ga<sub>1−x</sub>N (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐k Atomic Layer Deposited Gate Oxides
Journal article published in 2020 by
Shahab Mollah 
,
Kamal Hussain,
Richard Floyd,
Abdullah Mamun ,
Mikhail Gaevski,
Mvs Chandrashekhar,
Iftikhar Ahmad,
Grigory Simin,
Virginia Wheeler,
Charles Eddy,
Asif Khan
,
Kamal Hussain,
Richard Floyd,
Abdullah Mamun ,
Mikhail Gaevski,
Mvs Chandrashekhar,
Iftikhar Ahmad,
Grigory Simin,
Virginia Wheeler,
Charles Eddy,
Asif Khan
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