Published in
Springer, Journal of Materials Science: Materials in Electronics, 8(31), p. 5854-5860, 2019
DOI: 10.1007/s10854-019-02661-7
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Investigation on the formation technique of SiGe Fin for the high mobility channel FinFET device
Journal article published in 2019 by
Zhiqian Zhao,
Xiaohong Cheng,
Yongliang Li 
,
Ying Zan,
Haoyan Liu,
Guilei Wang,
Anyan Du,
Junjie Li,
Qingzhu Zhang,
Gaobo Xu,
Xueli Ma,
Xiaolei Wang,
Hong Yang,
Jing Xu,
Jun Luo
and other authors.
,
Ying Zan,
Haoyan Liu,
Guilei Wang,
Anyan Du,
Junjie Li,
Qingzhu Zhang,
Gaobo Xu,
Xueli Ma,
Xiaolei Wang,
Hong Yang,
Jing Xu,
Jun Luo
and other authors.
This paper is made freely available by the publisher.
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