Published in
Royal Society of Chemistry, Materials Advances, 2(1), p. 167-176, 2020
DOI: 10.1039/d0ma00072h
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Role of the electronically-active amorphous state in low-temperature processed In2O3 thin-film transistors
Journal article published in 2020 by
Ahmad R. Kirmani 
,
Emily F. Roe,
Christopher M. Stafford ,
Lee J. Richter
,
Emily F. Roe,
Christopher M. Stafford ,
Lee J. Richter
This paper is made freely available by the publisher.
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Abstract
Process-structure-transport relationships in low-temperature-processed, blade-coated In2O3 transistors using sol–gel and combustion chemistries are explored with X-ray scattering techniques. Electron mobility of ≈4.5 cm2 V−1 s−1 is achieved at ≈220 °C.