Published in
Institute of Electrical and Electronics Engineers, IEEE Transactions on Nuclear Science, 1(67), p. 245-252, 2020
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Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2 Gate Dielectrics
Journal article published in 2020 by
Mariia Gorchichko 
,
Yanrong Cao ,
En Xia Zhang ,
Dawei Yan ,
Huiqi Gong ,
Simeng E. Zhao ,
Pan Wang ,
Rong Jiang ,
Chundong Liang,
Daniel M. Fleetwood ,
Ronald D. Schrimpf ,
Robert A. Reed ,
Dimitri Linten
,
Yanrong Cao ,
En Xia Zhang ,
Dawei Yan ,
Huiqi Gong ,
Simeng E. Zhao ,
Pan Wang ,
Rong Jiang ,
Chundong Liang,
Daniel M. Fleetwood ,
Ronald D. Schrimpf ,
Robert A. Reed ,
Dimitri Linten
This paper was not found in any repository, but could be made available legally by the author.
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