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American Institute of Physics, Applied Physics Letters, 21(103), p. 213114

DOI: 10.1063/1.4833315

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Conductance modulation in topological insulator Bi2Se3 thin films with ionic liquid gating

This paper is available in a repository.
This paper is available in a repository.

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Abstract

A Bi2Se3 topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged impurities on the transport properties. The conductance modulation with gate bias is due to a change in the carrier concentration, whereas the temperature dependent conductance change is originated from a change in mobility. Large conductance modulation at room temperature along with the transparent optical properties makes topological insulators as an interesting (opto)electronic material. ; Comment: Appl. Phys. Lett. (2013)