Published in
American Chemical Society, ACS Applied Electronic Materials, 12(1), p. 2646-2654, 2019
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Engineering the Interfacial Electronic Structure of Epitaxial Ge/AlAs(001) Heterointerfaces via Substitutional Boron Incorporation: The Roles of Doping and Interface Stoichiometry
Journal article published in 2019 by
Michael B. Clavel 
,
Gabriel Greene-Diniz ,
Myrta Grüning ,
Karen T. Henry,
Markus Kuhn,
Robert J. Bodnar,
Mantu K. Hudait
,
Gabriel Greene-Diniz ,
Myrta Grüning ,
Karen T. Henry,
Markus Kuhn,
Robert J. Bodnar,
Mantu K. Hudait
This paper was not found in any repository, but could be made available legally by the author.
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- Must not violate ACS ethical Guidelines
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