Published in
Institute of Electrical and Electronics Engineers, IEEE Journal of the Electron Devices Society, (7), p. 869-877, 2019
DOI: 10.1109/jeds.2019.2907957
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Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs
Journal article published in 2019 by
Sanghyeon Kim 
,
Jin Dong Song,
M. A. Alam ,
Hyung-Jun Kim,
Seong Kwang Kim,
Sanghoon Shin,
Jae-Hoon Han,
Dae-Myeong Geum,
Jae-Phil Shim,
Subin Lee,
Hansung Kim ,
Gunwu Ju
,
Jin Dong Song,
M. A. Alam ,
Hyung-Jun Kim,
Seong Kwang Kim,
Sanghoon Shin,
Jae-Hoon Han,
Dae-Myeong Geum,
Jae-Phil Shim,
Subin Lee,
Hansung Kim ,
Gunwu Ju
This paper is made freely available by the publisher.
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