Published in
IOP Publishing, Japanese Journal of Applied Physics, 3(59), p. 031006, 2020
DOI: 10.35848/1347-4065/ab7271
Links
Tools
Modeling of carrier scattering in MOS inversion layers with large density of interface states and simulation of electron Hall mobility in 4H-SiC MOSFETs
Journal article published in 2020 by
Hajime Tanaka 
,
Nobuya Mori
,
Nobuya Mori
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Published version:
archiving forbidden
Data provided by 