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American Institute of Physics, Journal of Applied Physics, 3(127), p. 034302, 2020

DOI: 10.1063/1.5132604

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Size control of GaN nanocrystals formed by ion implantation in thermally grown silicon dioxide

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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