Fundamental origin of excellent low-noise property in 3D Si-MOSFETs similar to Impact of charge-centroid in the channel due to quantum effect on 1/f noise similar to
Book published in 2011 by
W. Feng,
R. Hettiarachchi,
Y. Lee,
S. Sato,
K. Kakushima,
M. Sato,
K. Fukuda 
,
M. Niwa,
K. Yamabe,
K. Shiraishi,
H. Iwai,
K. Ohmori,
Ieee
,
M. Niwa,
K. Yamabe,
K. Shiraishi,
H. Iwai,
K. Ohmori,
Ieee
