Characterization and Electrical Modeling Including Trapping Effects of A1n/GaN HEMT 4⨯ 50$μ$mon Silicon Substrate
Proceedings article published in 2018 by
Mohamed Bouslama,
Ahmad Al Hajjar,
Raphael Sommet,
Farid Medjdoub 
,
Jean-Christophe Nallatamby
,
Jean-Christophe Nallatamby
