Published in
Elsevier, Microelectronics Reliability, (100-101), p. 113461, 2019
DOI: 10.1016/j.microrel.2019.113461
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Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment
Journal article published in 2019 by
M. Borga,
M. Meneghini,
D. Benazzi,
E. Canato,
R. Püsche,
J. Derluyn,
I. Abid,
F. Medjdoub 
,
G. Meneghesso,
E. Zanoni
,
G. Meneghesso,
E. Zanoni
This paper was not found in any repository, but could be made available legally by the author.
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