Published in
Institute of Electrical and Electronics Engineers, IEEE Transactions on Electron Devices, 12(66), p. 5080-5083, 2019
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Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs
Journal article published in 2019 by
M. Rzin,
B. Guillet 
,
L. Mechin ,
L. Méchin,
P. Gamarra,
C. Lacam,
F. Medjdoub ,
J.-M. Routoure
,
L. Mechin ,
L. Méchin,
P. Gamarra,
C. Lacam,
F. Medjdoub ,
J.-M. Routoure
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