Published in
Royal Society of Chemistry, RSC Advances, 5(10), p. 2967-2974, 2020
DOI: 10.1039/c9ra08749d
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Computational insights into structural, electronic and optical characteristics of GeC/C2N van der Waals heterostructures: effects of strain engineering and electric field
Journal article published in 2020 by
Hong T. T. Nguyen,
Tuan V. Vu 
,
Van Thinh Pham,
Nguyen N. Hieu ,
Huynh V. Phuc,
Bui D. Hoi,
Nguyen T. T. Binh,
M. Idrees,
B. Amin ,
Chuong V. Nguyen
,
Van Thinh Pham,
Nguyen N. Hieu ,
Huynh V. Phuc,
Bui D. Hoi,
Nguyen T. T. Binh,
M. Idrees,
B. Amin ,
Chuong V. Nguyen
This paper is made freely available by the publisher.
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Abstract
Vertical heterostructures from two or more than two two-dimensional materials are recently considered as an effective tool for tuning the electronic properties of materials and for designing future high-performance nanodevices.