Published in
Royal Society of Chemistry, RSC Advances, 4(10), p. 1878-1882, 2020
DOI: 10.1039/c9ra08882b
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Surface morphology smoothing of a 2 inch-diameter GaN homoepitaxial layer observed by X-ray diffraction topography
Journal article published in 2020 by
Jaemyung Kim,
Okkyun Seo 
,
Satoshi Hiroi,
Yoshihiro Irokawa,
Toshihide Nabatame,
Yasuo Koide,
Osami Sakata
,
Satoshi Hiroi,
Yoshihiro Irokawa,
Toshihide Nabatame,
Yasuo Koide,
Osami Sakata
This paper is made freely available by the publisher.
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Abstract
We investigated the surface morphology changes in a 2 inch-diameter, c-plane, free-standing GaN wafer using X-ray diffraction topography in a grazing-incidence geometry.