Published in
Institute of Electrical and Electronics Engineers, IEEE Journal of the Electron Devices Society, (7), p. 483-488, 2019
DOI: 10.1109/jeds.2019.2910271
Links
Tools
Novel 10-nm Gate Length MoS2 Transistor Fabricated on Si Fin Substrate
Journal article published in 2019 by
Yu Pan,
Junfeng Li,
Wenwu Wang,
Tianchun Ye 
,
Huaxiang Yin ,
Kailiang Huang,
Zhaohao Zhang ,
Qingzhu Zhang ,
Kunpeng Jia,
Zhenhua Wu ,
Kun Luo,
Jiahan Yu
,
Huaxiang Yin ,
Kailiang Huang,
Zhaohao Zhang ,
Qingzhu Zhang ,
Kunpeng Jia,
Zhenhua Wu ,
Kun Luo,
Jiahan Yu
This paper is made freely available by the publisher.
Full text: Download
Data provided by 