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IOP Publishing, Journal of Physics: Conference Series, 1(1410), p. 012228, 2019

DOI: 10.1088/1742-6596/1410/1/012228

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Analysis of doping distribution in horizontal GaAs nanowires with axial p-n junction by the conductive atomic force microscopy

Journal article published in 2019 by B. R. Borodin ORCID, P. A. Alekseev, M. S. Dunaevskiy, V. Khayrudinov ORCID, H. Lipsanen
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

Abstract This work presents the results of an investigation of in plane horizontal GaAs nanowires by Scanning Probe Microscopy (SPM) methods. Topography and a local conductivity map of the horizontal nanowire with axial p-n junction are obtained. The distribution of doping and position of p-n junctions in nanowires are visualized. The I-V curves of differently doped parts of nanowires were measured. These data can be important for the understanding of the doping incorporation mechanism of GaAs nanowires.