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IOP Publishing, Journal of Physics: Conference Series, 1(1410), p. 012157, 2019

DOI: 10.1088/1742-6596/1410/1/012157

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Investigation of optical properties of In(Ga)As/GaAs mesa structures with active region based on quantum wells, quantum dots, and quantum well-dots

Journal article published in 2019 by A. S. Dragunova, N. V. Kryzhanovskaya, M. V. Maximov, S. A. Mintairov ORCID, N. A. Kalyuzhnyy, E. I. Moiseev ORCID, I. S. Mukhin, V. G. Tikhomirov, A. E. Zhukov
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

Abstract In this work photoluminescence (PL) of mesa-structures that contain three different types of active regions based on InGaAs/GaAs quantum wells (QWs), InAs/InGaAs/GaAs quantum dots (QDs) and InGaAs/GaAs quantum well-dots(QWD) is studied. Comparative analysis of the PL intensity obtained at different temperatures and optical excitation powers on mesa diameter is done.