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IOP Publishing, Journal of Physics: Conference Series, 7(1400), p. 077013, 2019

DOI: 10.1088/1742-6596/1400/7/077013

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Filling of In(Ga)P/GaInP quantum dot electron states detected by microphotoluminescence

Journal article published in 2019 by A. Yu Romanova, K. G. Belyaev, P. A. Buriak, A. S. Vlasov, N. A. Kalyuzhnyy, S. A. Mintairov ORCID, R. Salii, D. V. Lebedev, M. V. Rakhlin, V. I. Smirnov, A. A. Toropov ORCID, A. A. Bogdanov, S. Ramezanpour, A. M. Mintairov
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

Abstract Microphotoluminescence (μPL) spectra of single In(Ga)P/GaInP quantum dots (QD) were investigated. Measurements were carried out at different optical pump power and at different electric field with constant optical pump. Filling of electron s-, p-, d-states was observed. Quantum confinement Stark effect (QCSE) was detected. Obtained PL life times of s-, p- electron states were 0.5 ns and 0.4 ns respectively. From spectra it is clearly seen that QDs have weak quantum confinement (hω0 ∼4-8meV).