Published in

IOP Publishing, Journal of Physics: Conference Series, 5(1400), p. 055007, 2019

DOI: 10.1088/1742-6596/1400/5/055007

Links

Tools

Export citation

Search in Google Scholar

Raman spectra of GaSe epitaxial layers grown on GaAs substrates and group-theoretical analysis of their vibrational modes

Journal article published in 2019 by V. Yu Davydov, Yu E. Kitaev ORCID, A. N. Smirnov, I. A. Eliseyev, A. N. Starukhin, P. S. Avdienko, I. V. Sedova, S. V. Sorokin
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

Full text: Download

Red circle
Preprint: archiving forbidden
Red circle
Postprint: archiving forbidden
Green circle
Published version: archiving allowed
Upload
Policy details
Data provided by SHERPA/RoMEO

Abstract

Abstract A complete group-theoretical analysis of vibrational modes in ε, β, γ-GaSe polytypes has been performed. Raman spectroscopy data obtained on single crystals of ε-GaSe with a subsequent group-theoretical analysis were used to analyze the Raman spectra low-dimensional GaSe structures. Information was obtained on the structural properties of epitaxial layers and arrays of nanorods of the ε-polytype GaSe grown by molecular beam epitaxy on GaAs (001) substrates.