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Institute of Electrical and Electronics Engineers, IEEE Transactions on Electron Devices, 11(66), p. 4597-4603, 2019

DOI: 10.1109/ted.2019.2943014

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Breakdown Walkout in Polarization-Doped Vertical GaN Diodes

This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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