Published in
American Institute of Physics, Applied Physics Letters, 22(115), p. 221601, 2019
DOI: 10.1063/1.5123374
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Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors
Journal article published in 2019 by
Jun Lu,
Jr-Tai Chen 
,
Martin Dahlqvist,
Riad Kabouche,
Farid Medjdoub ,
Johanna Rosen,
Olof Kordina,
Lars Hultman
,
Martin Dahlqvist,
Riad Kabouche,
Farid Medjdoub ,
Johanna Rosen,
Olof Kordina,
Lars Hultman
This paper was not found in any repository, but could be made available legally by the author.
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