Published in

Institute of Electrical and Electronics Engineers, IEEE Electron Device Letters, 5(40), p. 686-689, 2019

DOI: 10.1109/led.2019.2905527

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Position-Dependent Transport of n-p-n Junctions in Axially Doped SiGe Nanowire Transistors

This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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