Published in
Institute of Electrical and Electronics Engineers, IEEE Design and Test, 3(36), p. 39-45, 2019
DOI: 10.1109/mdat.2019.2902094
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Design of 2T/Cell and 3T/Cell Nonvolatile Memories with Emerging Ferroelectric FETs
Journal article published in 2019 by
Xueqing Li 
,
Juejian Wu,
Kai Ni ,
Sumitha George,
Kaisheng Ma,
John Sampson,
Sumeet Kumar Gupta,
Yongpan Liu ,
Huazhong Yang ,
Suman Datta ,
Vijaykrishnan Narayanan
,
Juejian Wu,
Kai Ni ,
Sumitha George,
Kaisheng Ma,
John Sampson,
Sumeet Kumar Gupta,
Yongpan Liu ,
Huazhong Yang ,
Suman Datta ,
Vijaykrishnan Narayanan
This paper is made freely available by the publisher.
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