Published in

Wiley, physica status solidi (RRL) - Rapid Research Letters, 10(13), p. 1900282, 2019

DOI: 10.1002/pssr.201900282

Links

Tools

Export citation

Search in Google Scholar

Scaling the Equivalent Oxide Thickness by Employing a TiO 2 Thin Film on a ZrO 2 –Al 2 O 3 ‐Based Dielectric for Further Scaling of Dynamic Random Access Memory

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Green circle
Preprint: archiving allowed
Orange circle
Postprint: archiving restricted
Red circle
Published version: archiving forbidden
Data provided by SHERPA/RoMEO