Published in
Institute of Electrical and Electronics Engineers, IEEE Transactions on Nuclear Science, 6(66), p. 911-917, 2019
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Comparison of Total-Ionizing-Dose Effects in Bulk and SOI FinFETs at 90 and 295 K
Journal article published in 2019 by
T. D. Haeffner 
,
R. A. Reed,
R. D. Schrimpf ,
D. M. Fleetwood ,
R. F. Keller,
R. Jiang ,
B. D. Sierawski ,
M. W. Mccurdy,
E. X. Zhang ,
R. W. Mohammed ,
D. R. Ball,
M. L. Alles
,
R. A. Reed,
R. D. Schrimpf ,
D. M. Fleetwood ,
R. F. Keller,
R. Jiang ,
B. D. Sierawski ,
M. W. Mccurdy,
E. X. Zhang ,
R. W. Mohammed ,
D. R. Ball,
M. L. Alles
This paper was not found in any repository, but could be made available legally by the author.
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