Published in
American Institute of Physics, Journal of Applied Physics, 17(126), p. 175703, 2019
DOI: 10.1063/1.5095235
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Excitation-intensity dependence of shallow and deep-level photoluminescence transitions in semiconductors
Journal article published in 2019 by
Conrad Spindler 
,
Thomas Galvani,
Ludger Wirtz ,
Germain Rey,
Susanne Siebentritt
,
Thomas Galvani,
Ludger Wirtz ,
Germain Rey,
Susanne Siebentritt
This paper was not found in any repository, but could be made available legally by the author.
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