Published in
IOP Publishing, Semiconductor Science and Technology, 12(34), p. 125001, 2019
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Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high-k ALD ZrO2 dielectric
Journal article published in 2019 by
Shahab Mollah 
,
Mikhail Gaevski,
Mvs Chandrashekhar,
Xuhong Hu,
Virginia Wheeler,
Kamal Hussain,
Abdullah Mamun ,
Richard Floyd,
Iftikhar Ahmad,
Grigory Simin,
Charles Eddy,
Asif Khan
,
Mikhail Gaevski,
Mvs Chandrashekhar,
Xuhong Hu,
Virginia Wheeler,
Kamal Hussain,
Abdullah Mamun ,
Richard Floyd,
Iftikhar Ahmad,
Grigory Simin,
Charles Eddy,
Asif Khan
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