RF-MBE法を用いた六方晶および立方晶InNのエピタキシャル成長 ; Epitaxial Growth of hexagonal and cubic InN using RF-MBE
Published in 2003 by
貞史 吉田,
サダフミ ヨシダ,
Sadafumi Yoshida,
裕之 矢口,
ヒロユキ ヤグチ,
Hiroyuki Yaguchi,
泰斗 土方,
ヤスオ ヒジカタ,
Yasuto Hijikata,
操. 折原,
ミサオ オリハラ,
Misao Orihara
Abstract
We have grown InN films on 3C-SiC (001) substrates with and without cubic GaN underlayers by RF-MBE. It was found that, in the case of direct growth on 3C-SiC (001), hexagonal InN grows with the crystal orientation as hexagonal InN [1-100]//3C-SiC [110], while, in the case of the growth on cubic GaN underlayers, cubic InN grows with the crystal orientation as cubic InN [110]//cubic GaN [110]. Photoluminescence emissions from the cubic and hexagonal InN films were clearly observed at around 0.7 eV.