Published in
American Institute of Physics, Applied Physics Letters, 10(115), p. 103502, 2019
DOI: 10.1063/1.5108832
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Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors
Journal article published in 2019 by
Weijie Wang,
Seung Min Lee,
Sara Pouladi,
Jie Chen,
Shahab Shervin,
Seonno Yoon 
,
Jung Hwan Yum,
Eric S. Larsen ,
Christopher W. Bielawski,
Bikramjit Chatterjee ,
Sukwon Choi ,
Jungwoo Oh ,
Jae-Hyun Ryou
,
Jung Hwan Yum,
Eric S. Larsen ,
Christopher W. Bielawski,
Bikramjit Chatterjee ,
Sukwon Choi ,
Jungwoo Oh ,
Jae-Hyun Ryou
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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