Published in
American Institute of Physics, Journal of Applied Physics, 3(126), p. 034102, 2019
DOI: 10.1063/1.5049220
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Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors
Journal article published in 2019 by
T. Partida-Manzanera 
,
Z. H. Zaidi ,
J. W. Roberts ,
S. B. Dolmanan,
K. B. Lee,
P. A. Houston,
P. R. Chalker ,
S. Tripathy,
R. J. Potter
,
Z. H. Zaidi ,
J. W. Roberts ,
S. B. Dolmanan,
K. B. Lee,
P. A. Houston,
P. R. Chalker ,
S. Tripathy,
R. J. Potter
This paper was not found in any repository, but could be made available legally by the author.
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