Published in
American Institute of Physics, APL Materials, 9(7), p. 091105, 2019
DOI: 10.1063/1.5108654
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Exploiting the switching dynamics of HfO2-based ReRAM devices for reliable analog memristive behavior
Journal article published in 2019 by
F. Cüppers 
,
S. Menzel ,
C. Bengel ,
A. Hardtdegen ,
M. von Witzleben,
U. Böttger,
R. Waser ,
S. Hoffmann-Eifert
,
S. Menzel ,
C. Bengel ,
A. Hardtdegen ,
M. von Witzleben,
U. Böttger,
R. Waser ,
S. Hoffmann-Eifert
This paper is made freely available by the publisher.
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