Published in
American Institute of Physics, AIP Advances, 9(9), p. 095058, 2019
DOI: 10.1063/1.5053160
Links
Tools
Zn vacancy complex-determined filamentary resistive switching characteristics in Au/ZnSe/ITO chalcogenide-based memory cells
This paper is made freely available by the publisher.
Full text: Download
Preprint: archiving forbidden
Data provided by 