Published in
Institute of Electrical and Electronics Engineers, IEEE Transactions on Electron Devices, 8(66), p. 3290-3295, 2019
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Investigation of the Trap States and $V_{\text{TH}}$ Instability in LPCVD Si3N4/AlGaN/GaN MIS-HEMTs with an In-Situ Si3N4 Interfacial Layer
Journal article published in 2019 by
Hui Sun 
,
Maojun Wang ,
Ruiyuan Yin ,
Jianguo Chen ,
Shuai Xue,
Jiansheng Luo,
Yilong Hao,
Dongmin Chen
,
Maojun Wang ,
Ruiyuan Yin ,
Jianguo Chen ,
Shuai Xue,
Jiansheng Luo,
Yilong Hao,
Dongmin Chen
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