Published in
Institute of Electrical and Electronics Engineers, IEEE Electron Device Letters, 7(40), p. 1060-1063, 2019
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The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs
Journal article published in 2019 by
Georges Pavlidis 
,
Samuel H. Kim,
Idriss Abid,
Malek Zegaoui,
Farid Medjdoub ,
Samuel Graham
,
Samuel H. Kim,
Idriss Abid,
Malek Zegaoui,
Farid Medjdoub ,
Samuel Graham
This paper was not found in any repository, but could be made available legally by the author.
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