Published in
Institute of Electrical and Electronics Engineers, IEEE Transactions on Nuclear Science, 7(66), p. 1599-1605, 2019
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Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si
Journal article published in 2019 by
Simeng E. Zhao 
,
Stefano Bonaldo ,
Pan Wang ,
Rong Jiang ,
Huiqi Gong ,
En Xia Zhang ,
Niamh Waldron,
Bernardette Kunert,
Jerome Mitard,
Nadine Collaert,
Sonja Sioncke,
Dimitri Linten,
Ronald D. Schrimpf ,
Robert A. Reed,
Simone Gerardin
and other authors.
,
Stefano Bonaldo ,
Pan Wang ,
Rong Jiang ,
Huiqi Gong ,
En Xia Zhang ,
Niamh Waldron,
Bernardette Kunert,
Jerome Mitard,
Nadine Collaert,
Sonja Sioncke,
Dimitri Linten,
Ronald D. Schrimpf ,
Robert A. Reed,
Simone Gerardin
and other authors.
This paper was not found in any repository, but could be made available legally by the author.
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