Published in
American Institute of Physics, Applied Physics Letters, 5(115), p. 052103, 2019
DOI: 10.1063/1.5109301
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Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress
Journal article published in 2019 by
F. Masin 
,
M. Meneghini ,
E. Canato,
C. De Santi,
A. Stockman ,
E. Zanoni ,
P. Moens,
G. Meneghesso
,
M. Meneghini ,
E. Canato,
C. De Santi,
A. Stockman ,
E. Zanoni ,
P. Moens,
G. Meneghesso
This paper was not found in any repository, but could be made available legally by the author.
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