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Wiley, Advanced Materials, 6(21), p. 683-687, 2009

DOI: 10.1002/adma.200801752

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Solution-Processable Near-IR Photodetectors Based on Electron Transfer from PbS Nanocrystals to Fullerene Derivatives

This paper is available in a repository.
This paper is available in a repository.

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Abstract

The use of a soluble derivative [6,6]-Phenyl-C61-Butyric acid Methyl ester (PCBM), to obtain hybrid thin-film photodetectors with a spectral sensitivity covering the visible and near-IR spectral range up to 1300 nm, was studied. The samples for electrical measurements were spin-coated from a chlorobenzene solution onto Si/SiOx substrates with interdigitated electrodes. The samples were inspected using a ZEISS 1540 XB cross-beam electron microscope. The photocurrent was measured using a lock-in amplifier, and by illuminating the sample with a halogen lamp. A strong decrease in the responsivity on increasing power was observed in pure nanocrystal photodetectors. Field effect transistors measurements proved that the electrons are the mobile carriers in the photodetectors, while holes were tapped in the nanocrystals. Photoconductive gain as well as a linear power dependence of the photocurrent was also obtained.