Published in
Elsevier, Journal of Crystal Growth, (512), p. 208-212, 2019
DOI: 10.1016/j.jcrysgro.2019.01.034
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Nitrogen-rich growth for device quality N-polar InGaN/GaN quantum wells by plasma-assisted MBE
Journal article published in 2019 by
Henryk Turski 
,
Anna Feduniewicz-Żmuda,
Marta Sawicka,
Anna Reszka,
Bogdan Kowalski ,
Marcin Kryśko,
Paweł Wolny,
Julita Smalc-Koziorowska,
Marcin Siekacz,
Grzegorz Muzioł,
Krzesimir Nowakowski-Szukudlarek,
Szymon Grzanka,
Czeslaw Skierbiszewski
,
Anna Feduniewicz-Żmuda,
Marta Sawicka,
Anna Reszka,
Bogdan Kowalski ,
Marcin Kryśko,
Paweł Wolny,
Julita Smalc-Koziorowska,
Marcin Siekacz,
Grzegorz Muzioł,
Krzesimir Nowakowski-Szukudlarek,
Szymon Grzanka,
Czeslaw Skierbiszewski
This paper was not found in any repository, but could be made available legally by the author.
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