Published in
Elsevier, Solid-State Electronics, (158), p. 59-63, 2019
DOI: 10.1016/j.sse.2019.05.013
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Investigation on the improvement of stability of nitrogen doped amorphous SiInZnO thin-film transistors
Journal article published in 2019 by
Byeong Hyeon Lee,
Doo-Yong Lee,
Ji Ye Lee,
Sungkyun Park,
Sangsig Kim,
Sang Yeol Lee
This paper was not found in any repository, but could be made available legally by the author.
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