Published in
Springer, Journal of Materials Science: Materials in Electronics, 15(30), p. 14130-14135, 2019
DOI: 10.1007/s10854-019-01779-y
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A novel three-layer graded SiGe strain relaxed buffer for the high crystal quality and strained Si0.5Ge0.5 layer epitaxial grown
Journal article published in 2019 by
Zhiqian Zhao,
Yongliang Li 
,
Guilei Wang,
Anyan Du,
Shihai Gu,
Yan Li,
Qingzhu Zhang,
Gaobo Xu,
Xueli Ma,
Xiaolei Wang,
Hong Yang,
Jun Luo,
JunFeng Li,
Huaxiang Yin,
Wenwu Wang
,
Guilei Wang,
Anyan Du,
Shihai Gu,
Yan Li,
Qingzhu Zhang,
Gaobo Xu,
Xueli Ma,
Xiaolei Wang,
Hong Yang,
Jun Luo,
JunFeng Li,
Huaxiang Yin,
Wenwu Wang
This paper is made freely available by the publisher.
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