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Wiley-VCH Verlag, Chemical Vapor Deposition, 6(7), p. 245-248, 2001

DOI: 10.1002/1521-3862(200111)7:6<245::aid-cvde245>3.0.co;2-y

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New CVD source reagents for osmium thin film deposition

Journal article published in 2001 by H.-L. Yu, Y. Chi ORCID, C.-S. Liu, S.-M. Peng, G.-H. Lee, Yu HL;Chi Y;Liu CS;Peng SM;Lee Gh
This paper was not found in any repository; the policy of its publisher is unknown or unclear.
This paper was not found in any repository; the policy of its publisher is unknown or unclear.

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Abstract

2010302010006 ; 化學系 ; High-purity osmium film deposition is reported from two volatile osmuim complexes cis-OS(CO)(4)I-2 and fac-OS(CO)(3)(hfac)(trifluoroacetate). SEM analysis of films grown from CiS-OS(CO)4I2 at 450 degreesC shows snowflake type microcrystalline grains, which change at a higher deposition temperature of 550 degreesC to a closely packed micro crystalline grain structure (see Figure), with a preferred orientation along the (100) planes.