Published in
American Institute of Physics, Journal of Applied Physics, 17(125), p. 175701, 2019
DOI: 10.1063/1.5093809
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Strain related relaxation of the GaAs-like Raman mode selection rules in hydrogenated GaAs1−xNx layers
Journal article published in 2019 by
E. Giulotto 
,
M. Geddo ,
M. Patrini ,
G. Guizzetti ,
M. S. Sharma,
M. Capizzi ,
A. Polimeni,
G. Pettinari,
S. Rubini,
M. Felici
,
M. Geddo ,
M. Patrini ,
G. Guizzetti ,
M. S. Sharma,
M. Capizzi ,
A. Polimeni,
G. Pettinari,
S. Rubini,
M. Felici
This paper was not found in any repository, but could be made available legally by the author.
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