Published in
Royal Society of Chemistry, RSC Advances, 18(9), p. 10017-10023, 2019
DOI: 10.1039/c8ra09656b
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Formation of an MoTe2 based Schottky junction employing ultra-low and high resistive metal contacts
Journal article published in 2019 by
Sikandar Aftab,
Muhammad Waqas Iqbal 
,
Amir Muhammad Afzal,
M. Farooq Khan,
Ghulam Hussain,
Hafiza Sumaira Waheed,
Muhammad Arshad Kamran
,
Amir Muhammad Afzal,
M. Farooq Khan,
Ghulam Hussain,
Hafiza Sumaira Waheed,
Muhammad Arshad Kamran
This paper is made freely available by the publisher.
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Abstract
Schottky-barrier diodes have great importance in power management and mobile communication because of their informal device technology, fast response and small capacitance.