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Royal Society of Chemistry, RSC Advances, 18(9), p. 10017-10023, 2019

DOI: 10.1039/c8ra09656b

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Formation of an MoTe2 based Schottky junction employing ultra-low and high resistive metal contacts

Journal article published in 2019 by Sikandar Aftab, Muhammad Waqas Iqbal ORCID, Amir Muhammad Afzal, M. Farooq Khan, Ghulam Hussain, Hafiza Sumaira Waheed, Muhammad Arshad Kamran ORCID
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

Schottky-barrier diodes have great importance in power management and mobile communication because of their informal device technology, fast response and small capacitance.