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2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2018

DOI: 10.1109/s3s.2018.8640181

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Heat Shunting by Innovative Source/Drain Contact to Enable Monolithic 3D Integration of InGaAs MOSFETs

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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