Published in
Institute of Electrical and Electronics Engineers, IEEE Electron Device Letters, 2(40), p. 279-282, 2019
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3.8 W/mm RF Power Density for ALD Al2O3-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity
Journal article published in 2019 by
Shoichiro Imanishi 
,
Kiyotaka Horikawa,
Nobutaka Oi,
Satoshi Okubo,
Taisuke Kageura,
Atsushi Hiraiwa,
Hiroshi Kawarada
,
Kiyotaka Horikawa,
Nobutaka Oi,
Satoshi Okubo,
Taisuke Kageura,
Atsushi Hiraiwa,
Hiroshi Kawarada
This paper was not found in any repository, but could be made available legally by the author.
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