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Elsevier, Journal of Crystal Growth, (506), p. 8-13, 2019

DOI: 10.1016/j.jcrysgro.2018.10.013

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Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties

Journal article published in 2019 by M. Zíková, A. Hospodková, J. Pangrác, T. Hubáček ORCID, J. Oswald, K. Kuldová, F. Hájek, G. Ledoux, C. Dujardin ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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